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Freescale Semiconductor Technical Data
Document Number: MRF6S19140H Rev. 5, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.5% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19140HR3 MRF6S19140HSR3
1930 - 1990 MHz, 29 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF6S19140HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF6S19140HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 140 W CW Case Temperature 77C, 29 W CW Symbol RJC Value (2,3) 0.33 0.38 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
MRF6S19140HR3 MRF6S19140HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1150 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2 -- pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 15 26 -- -- -- 16 27.5 - 37 - 51 - 15 18 -- - 35 - 48 -9 dB % dBc dBc dB
MRF6S19140HR3 MRF6S19140HSR3 2 RF Device Data Freescale Semiconductor
+ VBIAS R3 + C13 R1 R5 C7 C3 Z5 Z6 Z7 Z8 Z9 B1 C5 C9 C11 C15
VSUPPLY
Z10 C2
RF OUTPUT
RF INPUT
Z1 C1
Z2
Z3
Z4 DUT
VBIAS R4 + C14 R2 R6 C8 C4 B2 C6 C10 C12 VSUPPLY
Z1 Z2 Z3 Z4 Z5 Z6
0.864 1.373 0.282 0.103 0.094 0.399
x 0.082 x 0.082 x 0.900 x 0.900 x 1.055 x 1.055
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 PCB
0.115 x 0.569 Microstrip 0.191 x 0.289 Microstrip 0.681 x 0.081 Microstrip 1.140 x 0.081 Microstrip Arlon GX0300 - 55 - 22, 0.030, r = 2.5
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part B1, B2 C1, C2 C3, C4, C5, C6 C7, C8, C9, C10, C11, C12 C13, C14 C15 R1, R2 R3, R4 R5, R6 Description Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 F, 50 V Chip Capacitors 47 F, 50 V Electrolytic Capacitors 470 F, 63 V Electrolytic Capacitor 560 k, 1/4 W Chip Resistors 1.0 k, 1/4 W Chip Resistors 12 , 1/4 W Chip Resistors Part Number 2743019447 ATC100B390JT500XT ATC100B9R1CT500XT GRM55DR61H106KA88B EMVY500ADA470MF80G ESMG630ELL471MK205 CRCW12065600FKTA CRCW12061001FKTA CRCW120612R0FKTA Manufacturer Fair - Rite ATC ATC Murata Nippon United Chemi - Con Vishay Vishay Vishay
MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 3
6S19140 C13 R3 B1 R5 C3 C5 C9 C11
R1 C1
C7
C15
C2 CUT OUT AREA C4 C6
(c) Motorola, Inc. 2002 DS1464
R2
C8
R4 C14
B2
R6
C10 C12
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
MRF6S19140HR3 MRF6S19140HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D Gps VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1150 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) D, DRAIN EFFICIENCY (%) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 D, DRAIN EFFICIENCY (%) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 900 mA -30 600 mA -40 IDQ = 1700 mA 1500 mA 100 1000 10 IRL, INPUT RETURN LOSS (dB) IM3 (dBc), ACPR (dBc) IRL, INPUT RETURN LOSS (dB) IM3 (dBc), ACPR (dBc) 20 18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 4 2 0 1910 1920 1930 1940 1950 1960 1970 1980 1990 ACPR IM3 IRL 40 30 20 10 0 -10 -20 -40 -60 -80 -100 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 29 Watts Avg.
18 16 Gps, POWER GAIN (dB) 14 12 10 8
D Gps VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1150 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
50 40 30 20 0 -20
IRL IM3
6 4 2 1910
-40 -60
ACPR
1920
1930 1940
1950
1960
1970
1980 1990
-80 2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 75 Watts Avg.
18 17 Gps, POWER GAIN (dB) 1500 mA 16 15 14 13 12 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1150 mA 900 mA 600 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two -Tone Measurements, 2.5 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1700 mA
-10 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two -Tone Measurements, 2.5 MHz Tone Spacing
-20
-50 1150 mA -60 1 Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 0.1 7th Order 3rd Order 5th Order VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1150 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 58 57 56 55 54 53 52 51 50 49 48 47 46 VDD = 28 Vdc, IDQ = 1150 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 P3dB = 53.1 dBm (204 W) Ideal
Pout, OUTPUT POWER (dBm)
P1dB = 52.3 dBm (171 W) Actual
1
10
100
TWO -TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
Figure 8. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
50 VDD = 28 Vdc, IDQ = 1150 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) TC = 25C IM3
-20
40
-30 IM3 (dBc), ACPR (dBc) D -40 ACPR -50 Gps
30
20
10
-60
0 1 10 Pout, OUTPUT POWER (WATTS) AVG.
-70 100
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25C 100 Gps
70 60 Gps, POWER GAIN (dB) 50 40 30 20 10 0 300 D, DRAIN EFFICIENCY (%)
18 17 16 15 14 13 12 11 10 9 8 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW IDQ = 1150 mA f = 1960 MHz 24 V 28 V VDD = 32 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19140HR3 MRF6S19140HSR3 6
Figure 11. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 29 W Avg., and D = 27.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 -20 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -30 -40 -50 -60 -70 -80 -90 -100 -7.5 -6 -4.5 -3 -1.5 0 1.5 3 4.5 6 7.5 -ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW -IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW 0 -10 1.2288 MHz Channel BW
Figure 13. 2 - Carrier CCDF N - CDMA
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 7
f = 2020 MHz
Zload f = 1900 MHz Zo = 5
Zsource f = 1900 MHz f = 2020 MHz
VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg. f MHz 1900 1930 1960 1990 2020 Zsource 2.27 - j3.95 2.00 - j4.24 1.72 - j3.96 1.80 - j3.51 1.69 - j3.17 Zload 1.13 - j0.67 1.11 - j0.60 1.07 - j0.46 1.06 - j0.30 1.01 - j0.17
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S19140HR3 MRF6S19140HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G 4
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B
M
M bbb ccc H
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF6S19140HR3
B
1
(FLANGE)
B
K D TA
2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M
bbb
M
B
M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
M bbb ccc H C
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465C - 02 ISSUE D NI - 880S MRF6S19140HSR3
MRF6S19140HR3 MRF6S19140HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 5 Date May 2007 Description * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed "Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications" bullet as functionality is standard, p. 1 * Added "Optimized for Doherty Applications" bullet to Features section, p. 1 * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History, p. 10
MRF6S19140HR3 MRF6S19140HSR3 10 RF Device Data Freescale Semiconductor
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MRF6S19140HR3 MRF6S19140HSR3
Document Number: RF Device Data MRF6S19140H Rev. 5, 5/2007 Freescale Semiconductor
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